Descripción
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In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Applied Physics Letters |
ISSN
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0003-6951 |
Factor de impacto JCR
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3,844 |
Información de impacto
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Datos JCR del año 2011 |
Volumen
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100 |
DOI
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Número de revista
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Desde la página
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152116-1 |
Hasta la página
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152116-4 |
Mes
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SIN MES |
Ranking
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