Research Publications in journals:
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
Year:2012
Research Areas
- Physics - Structure of materials,
- Physics - Semiconductors and band structure,
- Technology of devices for engineering
Information
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Abstract
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| In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface. | |
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International
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Si |
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JCR
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Title
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Applied Physics Letters |
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ISBN
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0003-6951 |
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Impact factor JCR
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3,844 |
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Impact info
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Datos JCR del año 2011 |
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Volume
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100 |
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Journal number
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From page
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152116-1 |
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To page
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152116-4 |
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Month
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SIN MES |
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Ranking
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Open Access publication
Participants
- Autor: Saurabh Pandey Department of Physics, University of Bologna
- Autor: Daniela Cavalcoli Department of Physics, University of Bologna
- Autor: Beatrice Fraboni Department of Physics, University of Bologna
- Autor: Anna Cavallini Department of Physics, University of Bologna
- Autor: Tommaso Brazzini . UPM
- Autor: Fernando Calle Gomez UPM
Research Group, Departaments and Institutes related
- Creador: Departamento: Ingeniería Electrónica