Abstract
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In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface. | |
International
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Si |
JCR
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Si |
Title
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Applied Physics Letters |
ISBN
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0003-6951 |
Impact factor JCR
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3,844 |
Impact info
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Datos JCR del año 2011 |
Volume
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100 |
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Journal number
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From page
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152116-1 |
To page
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152116-4 |
Month
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SIN MES |
Ranking
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