Memorias de investigación
Communications at congresses:
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
Year:2012

Research Areas
  • Physics - Semiconductors and band structure,
  • Chemistral tecnology,
  • Technology of devices for engineering

Information
Abstract
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
International
Si
Congress
Electronic Materials Conference (EMC2012)
960
Place
University Park, Pennsylvania (USA)
Reviewers
Si
ISBN/ISSN
000-0-0000-0000-0
Start Date
20/06/2012
End Date
22/06/2012
From page
1
To page
3
Actas del EMC2012
Participants
  • Autor: Marko Jak Tadjer . UPM
  • Autor: Travis J. anderson United States Naval Research Laboratory
  • Autor: N. Nepal United States Naval Research Laboratory
  • Autor: Tommaso Brazzini . UPM
  • Autor: Zarko Gacevic UPM
  • Autor: Sara Martin Horcajo UPM
  • Autor: H. Behmenburg AIXTRON
  • Autor: C. Giesen AIXTRON
  • Autor: M. Heuken AIXTRON
  • Autor: Fernando Calle Gomez UPM

Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica