Abstract
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|
---|---|
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs | |
International
|
Si |
Congress
|
Electronic Materials Conference (EMC2012) |
|
960 |
Place
|
University Park, Pennsylvania (USA) |
Reviewers
|
Si |
ISBN/ISSN
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000-0-0000-0000-0 |
|
|
Start Date
|
20/06/2012 |
End Date
|
22/06/2012 |
From page
|
1 |
To page
|
3 |
|
Actas del EMC2012 |