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Abstract
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|---|---|
| Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs | |
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International
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Si |
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Congress
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Electronic Materials Conference (EMC2012) |
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960 |
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Place
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University Park, Pennsylvania (USA) |
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Reviewers
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Si |
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ISBN/ISSN
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000-0-0000-0000-0 |
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Start Date
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20/06/2012 |
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End Date
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22/06/2012 |
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From page
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1 |
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To page
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3 |
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Actas del EMC2012 |