|
Descripción
|
|
|---|---|
| Silicon dioxide (SiO2) is an important dielectric material with a very wide transparency range and many applications in fields like photonics and microelectronics [1]. It may be found in either an amorphous (silica) or a crystalline (?-quartz) phase. The study of defects created by irradiation in SiO2 is relevant for nuclear (both fusion and fission) facilities [2] and space applications [3,4]. Hence, it is not surprising that several techniques like infrared spectroscopy, spectroscopic ellipsometry and RBS/C (in ?-quartz) have been used to study the irradiation damage. In this work we have used in-situ optical reflectance to obtain detailed information about the damage kinetics. | |
|
Internacional
|
Si |
|
Nombre congreso
|
17th International Conference On Radiation Effects In Insulators (REI-17) |
|
Tipo de participación
|
960 |
|
Lugar del congreso
|
Helsinki, Finlandia |
|
Revisores
|
Si |
|
ISBN o ISSN
|
0000-0000 |
|
DOI
|
|
|
Fecha inicio congreso
|
30/06/2013 |
|
Fecha fin congreso
|
05/07/2013 |
|
Desde la página
|
1 |
|
Hasta la página
|
1 |
|
Título de las actas
|
Proceedings |