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Abstract
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| Silicon dioxide (SiO2) is an important dielectric material with a very wide transparency range and many applications in fields like photonics and microelectronics [1]. It may be found in either an amorphous (silica) or a crystalline (?-quartz) phase. The study of defects created by irradiation in SiO2 is relevant for nuclear (both fusion and fission) facilities [2] and space applications [3,4]. Hence, it is not surprising that several techniques like infrared spectroscopy, spectroscopic ellipsometry and RBS/C (in ?-quartz) have been used to study the irradiation damage. In this work we have used in-situ optical reflectance to obtain detailed information about the damage kinetics. | |
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International
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Si |
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Congress
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17th International Conference On Radiation Effects In Insulators (REI-17) |
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960 |
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Place
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Helsinki, Finlandia |
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Reviewers
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Si |
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ISBN/ISSN
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0000-0000 |
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Start Date
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30/06/2013 |
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End Date
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05/07/2013 |
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From page
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1 |
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To page
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1 |
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Proceedings |