Memorias de investigación
Artículos en revistas:
Interband absorption of photons by extended states in intermediate band solar cells
Año:2013
Áreas de investigación
  • Dispositivos electrónicos,
  • Células solares
Datos
Descripción
This paper considers sub-bandgap photon absorption in an InAs/GaAs quantum dot matrix. Absorption coefficients are calculated for transitions from the extended states in the valence band to confined states in the conduction band. This completes a previous body of work in which transitions between bound states were calculated. The calculations are based on the empirical k·p Hamiltonian considering the quantum dots as parallelepipeds. The extended states may be only partially extended?in one or two dimensions?or extended in all three dimensions. It is found that extended-to-bound transitions are, in general, weaker than bound-to-bound transitions, and that the former are weaker when the initial state is extended in more coordinates. This study is of direct application to the research of intermediate band solar cells and other semiconductor devices based on light absorption in semiconductors nanostructured with quantum dots.
Internacional
Si
JCR del ISI
Si
Título de la revista
Solar Energy Materials And Solar Cells
ISSN
0927-0248
Factor de impacto JCR
4,63
Información de impacto
Volumen
115
DOI
Número de revista
Desde la página
134
Hasta la página
144
Mes
SIN MES
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física