Descripción
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This work aims at a deeper understanding of the energy loss phenomenon in polysilicon production reactors by the so-called Siemens process. Contributions to the energy consumption of the polysilicon deposition step are studied in this paper, focusing on the radiation heat loss phenomenon. A theoretical model for radiation heat loss calculations is experimentally validated with the help of a laboratory CVD prototype. Following the results of the model, relevant parameters that directly affect the amount of radiation heat losses are put forward. Numerical results of the model applied to a state-of-the-art industrial reactor show the influence of these parameters on energy consumption due to radiation per kilogram of silicon produced; the radiation heat loss can be reduced by 3.8% when the reactor inner wall radius is reduced from 0.78 to 0.70 m, by 25% when the wall emissivity is reduced from 0.5 to 0.3, and by 12% when the final rod diameter is increased from 12 to 15 cm. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Journal of Crystal Growth |
ISSN
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0022-0248 |
Factor de impacto JCR
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1,552 |
Información de impacto
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Volumen
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374 |
DOI
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Número de revista
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Desde la página
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5 |
Hasta la página
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10 |
Mes
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SIN MES |
Ranking
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