Memorias de investigación
Research Publications in journals:
Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure
Year:2013
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Materials for electric engineering and electronics,
  • Photon light receptor devices
Information
Abstract
We present a theoretical study of the structural and electronic properties of the M-doped MgIn2S4 ternary spinel semiconductor with M = V, Cr, and Mn. All substitutions, in the normal and in the inverse structure, are analyzed. Some of these possible substitutions present intermediate-band states in the band gap with a different occupation for a spin component. It increases the possibilities of inter-band transitions and could be interesting for applications in optoelectronic devices. The contribution to, and the electronic configuration of, these intermediate bands for the octahedral and tetrahedral sites is analyzed and discussed. The study of the substitutional energies indicates that these substitutions are favorable. Comparison between the pure and doped host's absorption coefficients shows that this deeper band opens up more photon absorption channels and could therefore increase the solar-light absorption with respect to the host.
International
Si
JCR
Si
Title
Journal of Applied Physics
ISBN
0021-8979
Impact factor JCR
2,21
Impact info
Volume
114
Journal number
From page
1
To page
7
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física