Memorias de investigación
Communications at congresses:
Intermediate band solar energy conversion in ZnTeO
Year:2013
Research Areas
  • Solar cells
Information
Abstract
Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.
International
Si
Congress
39th IEEE Photovoltaic Specialists Conference
960
Place
Tampa, FL, USA
Reviewers
Si
ISBN/ISSN
978-1-4799-3299-3
Start Date
16/06/2013
End Date
21/06/2013
From page
1640
To page
1643
Proceedings 39th IEEE PVSC
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física