Descripción
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Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe. | |
Internacional
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Si |
Nombre congreso
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39th IEEE Photovoltaic Specialists Conference |
Tipo de participación
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960 |
Lugar del congreso
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Tampa, FL, USA |
Revisores
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Si |
ISBN o ISSN
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978-1-4799-3299-3 |
DOI
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Fecha inicio congreso
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16/06/2013 |
Fecha fin congreso
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21/06/2013 |
Desde la página
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1640 |
Hasta la página
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1643 |
Título de las actas
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Proceedings 39th IEEE PVSC |