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Descripción
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| Si oxide films with a controlled excess of Si were deposited on Si wafers by LPCVD using Si2H6 and O2, thermally annealed to 1100 ºC for 1 h to form Si nanocrystals embedded in SiO2 and subsequently annealed at 450 ºC in forming gas. The samples were characterized by Fourier-transform infrared spectroscopy, spectroscopic ellipsometry and cathodoluminescence spectroscopy. The excess of Si in the as deposited samples, ranging from 0 to 70 % in volume, was obtained from the ellipsometry data analysis. After annealing at 1100 ºC, the samples show a luminescence band (665 nm) at 80 K and at room temperature which is associated to the presence of Si nanocrystals. The growth rate, the excess of Si incorporated to the films and the intensity of the luminescence band were modelled using a Face-Centered Central Composite Design as a function of the main deposition variables (pressure: 185- 300 mTorr, temperature: 250-400 ºC, Si2H6/O2 flow ratio: 2-5) aiming to control the growth process and the incorporation of Si in excess as well as to determine the experimental conditions that yield the samples with the maximum intensity of the luminescence emission. | |
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Internacional
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Si |
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Nombre congreso
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2007 MRS Spring Meeting. Symposium A |
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Tipo de participación
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960 |
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Lugar del congreso
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Strasbourg (Francia) |
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Revisores
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Si |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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28/05/2007 |
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Fecha fin congreso
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01/06/2007 |
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Título de las actas
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