Memorias de investigación
Communications at congresses:
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
Year:2013

Research Areas
  • Engineering,
  • Electronic technology and of the communications

Information
Abstract
Relacionado con líneas de investigación del GDS del ISOM http://www.isom.upm.es/dsemiconductores.ph
International
Si
Congress
Novel Gain Materials and Devices Based on III-V-N/Bi Compounds
960
Place
Istambul, Turkey
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
24/09/2013
End Date
26/09/2013
From page
0
To page
3
Proceedings
Participants

Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica