Memorias de investigación
Research Publications in journals:
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
Year:2013

Research Areas

Information
Abstract
0
International
Si
JCR
Si
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISBN
0018-9383
Impact factor JCR
2,318
Impact info
Volume
60
10.1109/TED.2013.2275031
Journal number
10
From page
3149
To page
3156
Month
Ranking
0
Participants
  • Autor: fernando calle UPM
  • Autor: marko j. tadjer UPM
  • Autor: travis j. anderson
  • Autor: roland baranyai
  • Autor: james w. pomeroy
  • Autor: tatyana i. feygelson
  • Autor: karl d. hobart
  • Autor: bradford b. pate
  • Autor: martin kuball

Research Group, Departaments and Institutes related
  • Creador: No seleccionado
  • Departamento: Ingeniería Electrónica