Memorias de investigación
Research Publications in journals:
Impact of Metal-Organic Vapor Phase Epitaxy Environment on Silicon Bulk Lifetime for III-V-on-Si Multijunction Solar Cells
Year:2014

Research Areas
  • Electronic technology and of the communications

Information
Abstract
With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.
International
Si
JCR
Si
Title
Solar Energy Materials And Solar Cells
ISBN
0927-0248
Impact factor JCR
5,03
Impact info
Datos JCR del año 2013
Volume
124
Journal number
From page
17
To page
23
Month
SIN MES
Ranking
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física