Artículos en revistas:
Impact of Metal-Organic Vapor Phase Epitaxy Environment on Silicon Bulk Lifetime for III-V-on-Si Multijunction Solar Cells
Impact of Metal-Organic Vapor Phase Epitaxy Environment on Silicon Bulk Lifetime for III-V-on-Si Multijunction Solar Cells
Año:2014
Áreas de investigación
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Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Solar Energy Materials And Solar Cells |
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ISSN
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0927-0248 |
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Factor de impacto JCR
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5,03 |
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Información de impacto
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Datos JCR del año 2013 |
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Volumen
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124 |
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DOI
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Número de revista
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Desde la página
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17 |
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Hasta la página
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23 |
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Mes
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SIN MES |
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Ranking
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Ver publicación en Archivo digital upm
Participantes
- Autor: Elisa Garcia-Tabares Valdivieso (UPM)
- Autor: Ignacio Rey-Stolle Prado (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)