Observatorio de I+D+i UPM

Memorias de investigación
Artículos en revistas:
Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications
Año:2014
Áreas de investigación
  • Ingeniería eléctrica, electrónica y automática,
  • Células solares,
  • Tecnología de dispositivos para ingeniería eléctrica y electrónica
Datos
Descripción
The metamorphic growth of lattice-mismatched materials has allowed optimizing the bandgap combination in multijunction solar cells for the solar spectrum under consideration. Buffer structures are used to accommodate the lattice-mismatch by introducing dislocations and relaxing the material in a controlled way. However, the metamorphic buffers typically involve significant growth time and material usage, which increases the cost of these solar cells. In this work, the thinning of buffer structures with continuously, linearly graded misfit is addressed with the goal of increasing the cost-effectiveness of metamorphic multijunction solar cells. The relaxation dynamics and quality of the buffer layers analyzed were assessed by in-situ stress measurements and ex-situ measurements of residual strain, threading dislocation density and surface roughness. Their ultimate quality has been tested using these buffers as templates for the growth of 1 eV Ga0.73In0.27As solar cells. The deleterious effect of thinning the grade layer of these buffer structures from 2 to 1 mu m was investigated. it is shown that prompting the relaxation of the buffer by using a stepwise misfit jump at the beginning of the grade layer improves the quality of the thinned buffer structure. The residual threading dislocation density of the optimized thin buffers, grown at a high growth rate of 7 mu m/h, is 3 x 10(6) cm(-2), and solar cells on these buffers exhibit near-icleal carrier collection efficiency and a V-oc of 0.62 V at 1-sun direct terrestrial spectrum.
Internacional
Si
JCR del ISI
Si
Título de la revista
Journal of Crystal Growth
ISSN
0022-0248
Factor de impacto JCR
1,693
Información de impacto
Volumen
393
DOI
Número de revista
Desde la página
64
Hasta la página
69
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: R.M. France
  • Autor: J.F. Geisz
  • Autor: J. Simon
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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