Descripción
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Multi-stacked InAs/AlGaAs quantum dot solar cells (QDSCs) introduced with field damping layers (FDL) which sustain the junction built-in potential have been studied. Without an external bias condition, the external quantum efficiency (EQE) of QD layers are reduced by introducing the thick FDL, because the carrier escape due to built-in electric field was suppressed. On the other hand, the photocurrent production due to two-step absorption is increased by the formation of flat-band QD structure for QDSC with thick FDL. | |
Internacional
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Si |
Nombre congreso
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6th World Conference on Photovoltaic Energy Conversion (WCPEC-6) |
Tipo de participación
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960 |
Lugar del congreso
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Kyoto (Japón) |
Revisores
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Si |
ISBN o ISSN
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CDP08UPM |
DOI
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Fecha inicio congreso
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23/11/2014 |
Fecha fin congreso
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27/11/2014 |
Desde la página
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123 |
Hasta la página
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124 |
Título de las actas
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WCPEC-6 TECHNICAL DIGEST |