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Descripción
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| The optical properties of InAlN/GaN based HEMT structures were examined by field-dependent photoluminescence spectroscopy as a function of temperature. Samples grown on Si subtrate were investigated. On top of a thick GaN buffer layer, an InAlN barrier of 10 nm causes a two-dimensional electron gas (2DEG), which dominates PL spectra at low temperatures at energies slightly below the donor-bound exciton. Semi-transparent metal contacts were processed either directly on top of the structures or seperated by an additional high-k dielectric, serving as Schottky or MIS diodes, respectively. Free exciton recombinations of the GaN buffer were observed for higher temperatures and allow determination of the strain in the GaN layer. Due to sample structure PL measurements exhibit mostly GaN related features. | |
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Internacional
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Si |
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Nombre congreso
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DPG Spring Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Desden, Germany |
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Revisores
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Si |
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ISBN o ISSN
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0000000000000 |
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DOI
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Fecha inicio congreso
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30/03/2014 |
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Fecha fin congreso
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03/04/2014 |
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Desde la página
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1 |
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Hasta la página
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2 |
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Título de las actas
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DPG Spring Meeting |