Memorias de investigación
Communications at congresses:
Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
Year:2014

Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices

Information
Abstract
Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
International
Si
Congress
23th European Workshop on Heterostructures Technology
960
Place
Giessen, Germany
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
12/10/2014
End Date
15/10/2014
From page
1
To page
2
23th European Workshop on Heterostructures Technology
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica