Communications at congresses:
Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
Year:2014
Research Areas
- Physics & space science,
- Phisics,
- Physics - Structure of materials
Information
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Abstract
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| Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency | |
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International
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Si |
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Congress
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18th Internationa conference on Molecular Beam Epitaxy |
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960 |
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Place
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Flagstaff, Arizona, USA |
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Reviewers
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Si |
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ISBN/ISSN
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0000000000000 |
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Start Date
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07/12/2014 |
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End Date
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09/12/2014 |
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From page
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10 |
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To page
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15 |
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18th Internationa conference on Molecular Beam Epitaxy |
Open Access publication
Participants
- Autor: Antonio David Utrilla Lomas UPM
- Autor: Jose Maria Ulloa Herrero UPM
- Autor: Zarko Gacevic UPM
- Autor: Alvaro de Guzman Fernandez Gonzalez UPM
- Autor: Adrian Hierro Cano UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Departamento: Ingeniería Electrónica
- Departamento: Ciencia de Materiales
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología