Abstract
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GaInP is a material commonly employed for the top subcells of different multijunction solar cells architectures. In this study, the performance of GaInP top cells has been improved by increasing the energy band gap with the use of Sb as a surfactant during the MOVPE growth of the structures. The optimization of the appropriate Sb molar flow was done by Reflectance Anisotropy Spectroscopy. Different characterization techniques have been employed to assess the effect of Sb on the morphology, microstructure and optoelectronic properties of the resulting GaInP grown with different Sb/P ratios. Finally, the performance of several GaInP subcells with different order parameters has been assessed. | |
International
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Si |
Congress
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42nd IEEE Photovoltaic Specialists Conference |
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960 |
Place
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New Orleans, LA (EEUU) |
Reviewers
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Si |
ISBN/ISSN
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978-1-4799-7944-8 |
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10.1109/PVSC.2015.7356354 |
Start Date
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14/06/2015 |
End Date
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19/06/2015 |
From page
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1 |
To page
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4 |
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Proc. 42nd IEEE PVSC |