Memorias de investigación
Communications at congresses:
Metamorphic III-V solar cells: recent progress and potential
Year:2015
Research Areas
  • Solar cells
Information
Abstract
Metamorphic semiconductor devices are commonly considered to have inferior electronic quality. However, recent development of compositionally graded buffers and junction structures have led to the achievement of high quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. Optimizing the optical design of the solar cell becomes important in order to enhance photon recycling and open circuit voltage in these cells. In this paper we first present recent performance results for 1eV and 0.7eV GaInAs solar cells grown on GaAs substrates. Then an electro-optical model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that significant improvements can be achieved by improving both the electronic quality and optics of these cells.
International
Si
Congress
42nd IEEE Photovoltaic Specialists Conference
960
Place
New Orleans, LA (EEUU)
Reviewers
Si
ISBN/ISSN
978-1-4799-7944-8
10.1109/PVSC.2015.7356436
Start Date
14/06/2015
End Date
19/06/2015
From page
1
To page
3
Proc. 42nd IEEE PVSC
Participants
  • Autor: Ivan Garcia Vara UPM
  • Autor: R.M. France
  • Autor: J.F. Geisz
  • Autor: W.E. McMahon
  • Autor: M.A. Steiner
  • Autor: D.J. Friedman
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física