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Abstract
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| In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including latticematched GaInP/GaInAs/Ge triple junction, GaInP/Ge double junction, and GaAs and Ge single junction solar cells. The methodology applied included the irradiation of two devices of each type; for a better control of the measurements, non-irradiated devices with the same characteristics of those irradiated were used as reference. The devices were monitored before and after each exposure by in-situ characterization of the electrical response under dark and under illumination using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V curve and external quantum efficiency measurements. Furthermore, results of the numerical simulation of devices with D-AMPS-1D code are presented in order to give a physical interpretation of the results. DLTS spectroscopy preliminary results for single junction GaAs cells are also presented. | |
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International
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Si |
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Congress
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31st European Photovoltaic Solar Energy Conference |
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960 |
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Place
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Hamburgo (Alemania) |
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Reviewers
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Si |
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ISBN/ISSN
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3-936338-39-6 |
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10.4229/EUPVSEC20152015-4CV.3.8 |
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Start Date
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14/09/2015 |
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End Date
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18/09/2015 |
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From page
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1439 |
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To page
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1443 |
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Proc. 31st PVSEC |