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Abstract
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| In this work, we describe a sputter technique enabling deposition of AlScN thin films with homogeneous thickness and composition on production size wafers (150-200 mm) and present some preliminary results on the assessment of the structural and piezoelectric properties of the films with Sc content of about 6.5 at.%. The technique is based on the use of pure Sc ingots embedded into the Al targets of the dual-target S-gun magnetron enabling reactive sputtering with high radial thickness and composition homogeneity. Rutherford backscattering was carried out to obtain the film composition. The microstructure and morphology were assessed by X-ray diffraction. Density was determined by X-ray grazing angle reflectometry. Electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. 1 ?m thick films showed wurtzite structure with pure c-axis orientation and rocking curves of the (00?2) diffraction peak with FWHM as low as 1.5º. Film properties appear to be uniform across 150-mm wafers. The material electromechanical coupling factor reached 9%, although the sound velocity of longitudinal mode was relatively low (around 8500 m/s). | |
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International
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Si |
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Congress
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IEEE Joint Conference IFCS-EFTF |
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970 |
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Place
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Denver (Colorado) |
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Reviewers
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Si |
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ISBN/ISSN
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DOI: 10.1109/FCS.2015.7138803 |
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Start Date
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12/04/2015 |
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End Date
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16/04/2015 |
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From page
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1 |
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To page
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4 |
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Proceedings in IEEE Joint Conference IFCS-EFTF |