Memorias de investigación
Research Publications in journals:
Reconfigurable Writing Architecture for Reliable RRAM Operation in Wide Temperature Ranges.
Year:2016

Research Areas
  • Electronic technology and of the communications

Information
Abstract
Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions. In particular, the circuit temperature and writing voltage schemes become critical issues, determining resistive switching memories performance. These dependencies usually force a design time tradeoff among reliability, device endurance, and power consumption, thereby imposing nonflexible functioning schemes and limiting the system performance. In this paper, we present a writing architecture that ensures the correct operation no matter the working temperature and allows the dynamic load of application-oriented writing profiles. Thus, taking advantage of more efficient configurations, the system can be dynamically adapted to overcome RRAM intrinsic challenges. Several profiles are analyzed regarding power consumption, temperature-variations protection, and operation speed, showing speedups near 700x compared with other published drivers.
International
Si
JCR
No
Title
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
ISBN
1557-9999
Impact factor JCR
Impact info
Volume
25
10.1109/TVLSI.2016.2634083
Journal number
4
From page
1224
To page
1235
Month
SIN MES
Ranking
Participants

Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones