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Artículos en revistas:
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
Áreas de investigación
  • Células solares
The impact of using thin GaAs(Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots (QDs) is investigated for their application in solar cell devices. We demonstrate the ability to combine strain-balancing techniques with band engineering approaches through the application of such CLs. Extended photo-response is attainable by means of an independent tunability of the electron and hole confinements in the QD. Moreover, the CL acts itself as a quantum well (QW), providing an additional photoresponse, so that the devices work as hybrid QD-QW solar cells. The use of a GaAsSb CL is particularly beneficial, providing devices with efficiencies under AM1.5 conditions 20% higher than standard GaAs-capped QDs. This is mainly due to a significant increase in photocurrent beyond the GaAs bandgap, leading to an enhanced short-circuit current density (J(sc)). The addition of N to the CLs, however, produces a strong reduction in J(sc). This is found to be related to carrier collection problems, namely, hindered electron extraction and retrapping in the CLs. Nevertheless, the application of reverse biases induces a release of the trapped carriers assisted by a sequential tunneling mechanism. In the case of GaAsN CLs, this leads to a complete carrier collection and reveals an even higher QD-QW-related photocurrent than when using a GaAsSb CL. The hindered carrier collection is stronger in the case of the quaternary CLs, likely due to the faster recombination rates in the type-I GaAsSbN/GaAs QW structure as compared to the type-II ternary counterparts. Nevertheless, alternative approaches, such as the use of a thinner CL or a short-period superlattice CL, lead to significant improvements, demonstrating a great potential for the quaternary CLs under a proper device design.
Título de la revista
Solar Energy Materials And Solar Cells
Factor de impacto JCR
Información de impacto
Número de revista
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Esta actividad pertenece a memorias de investigación
  • Autor: Antonio David Utrilla Lomas (UPM)
  • Autor: Jose Maria Ulloa Herrero (UPM)
  • Autor: Zarko Gacevic (UPM)
  • Autor: D.F. Reyes
  • Autor: Irene Artacho Huertas (UPM)
  • Autor: T. Ben
  • Autor: D. González
  • Autor: Adrian Hierro Cano (UPM)
  • Autor: A. Guzmán
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Departamento: Ciencia de Materiales
  • Departamento: Ingeniería Electrónica
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