Artículos en revistas:
Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOCVD without using strain-balance technology
Año:2016
Áreas de investigación
- Células solares
Datos
|
Descripción
|
|
|---|---|
| Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique ispresented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The bestconditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among awide range of possibilities. Solar cells with an excellent quantum ef?ciency have been obtained, with a sub-bandgapphoto-response of 0.07 mA/cm2per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potentialof this technology to be able to increase the ef?ciency of lattice-matched multi-junction solar cells and contributing to abetter understanding of QD technology toward the achievement of practical intermediate-band solar cells. | |
|
Internacional
|
Si |
|
JCR del ISI
|
Si |
|
Título de la revista
|
Progress in Photovoltaics |
|
ISSN
|
1062-7995 |
|
Factor de impacto JCR
|
9,696 |
|
Información de impacto
|
|
|
Volumen
|
24 |
|
DOI
|
10.1002/pip.2789 |
|
Número de revista
|
9 |
|
Desde la página
|
1261 |
|
Hasta la página
|
1271 |
|
Mes
|
SIN MES |
|
Ranking
|
|
Ver publicación en Archivo digital upm
Esta actividad pertenece a memorias de investigación
Participantes
- Autor: N.A. Kalyuzhnyy
- Autor: M.A. Mintairov
- Autor: R.A. Salii
- Autor: A.M. Nadtochiy
- Autor: A.S. Payusov
- Autor: P.N. Brunkov
- Autor: V.N. Nevedomsky
- Autor: M.Z. Shvarts
- Autor: Antonio Marti Vega UPM
- Autor: V.M. Andreev
- Autor: Antonio Luque López
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
- Departamento: Electrónica Física
- Centro o Instituto I+D+i: Instituto de Energía Solar