|
Descripción
|
|
|---|---|
| We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar+ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes. | |
|
Internacional
|
No |
|
JCR del ISI
|
No |
|
Título de la revista
|
2007 IEEE International Ultrasonics Symposium Proc. |
|
ISSN
|
1051-0117 |
|
Factor de impacto JCR
|
0 |
|
Información de impacto
|
|
|
Volumen
|
|
|
DOI
|
|
|
Número de revista
|
0 |
|
Desde la página
|
1401 |
|
Hasta la página
|
1404 |
|
Mes
|
SIN MES |
|
Ranking
|
|