Observatorio de I+D+i UPM

Descripción
We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar+ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes.
Internacional	No
JCR del ISI	No
Título de la revista	2007 IEEE International Ultrasonics Symposium Proc.
ISSN	1051-0117
Factor de impacto JCR	0
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DOI
Número de revista	0
Desde la página	1401
Hasta la página	1404
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• Participante: Nick Rimmer (Aviza Technology, Inc.)
• Autor: Jimena Olivares Roza (UPM)
• Autor: Enrique Iborra Grau (UPM)
• Participante: Amit Rastogi (Aviza Technology, Inc.)
• Autor: Sheila González Castilla (UPM)
• Autor: Marta Clement Lorenzo (UPM)

• Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
• Departamento: Tecnología Electrónica