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Abstract
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| This chapter reviews the impact of using thin alloyed capping layers (CLs) for InAs/GaAs quantum dot (QD) solar cells. This novel approach can be considered as a particular way to develop hybrid QD-quantum well (QW) solar cells in which a thin QW is additionally used to modify the properties of QDs. The tunability of the absorption edge, defined by the QD ground state, together with the additional photocurrent from the CL allows outweighing the virtually inevitable consequent drop in the open-circuit voltage, achieving an improved solar cell performance. Besides tuning the absorption edge, the use of a thin CL involves further implications concerning the structural properties and the electronic structure, which will be directly linked to the final device performance. Indeed, the QD-CL band alignment and the strain field can be modified according to the CL nature, whose presence may additionally affect carrier transport and therefore collection efficiency. This chapter encompasses a comprehensive exposition of the main mechanisms involved in the operation of QD solar cells modified by the introduction of thin CLs, supported by the combination of different characterization techniques and theoretical simulations. | |
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International
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Si |
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Book Edition
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Book Publishing
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ISBN
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978-1-53611-103-3 |
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Series
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Book title
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Advances in Energy Research. Volume 26 |
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From page
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83 |
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To page
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122 |