Memorias de investigación
Artículos en revistas:
Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
Año:2018
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and In-N bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting In-N bonds ormation, while the thermal annealing seems to affect the N-related defects density in the layers.
Internacional
Si
JCR del ISI
Si
Título de la revista
Applied Surface Science
ISSN
0169-4332
Factor de impacto JCR
4,439
Información de impacto
Volumen
433
DOI
10.1016/j.apsusc.2017.10.032
Número de revista
Desde la página
1
Hasta la página
9
Mes
SIN MES
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física