Abstract
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Defects in semiconductors, although atomistic in scale and often scarce in concentration, frequently represent the performance-limiting factor in optoelectronic devices such as solar cells. However, due to this scale and scarcity, direct experimental characterization of defects is technically challenging, timeconsuming, and expensive. Even so, the fact that defects can limit device performance suggests that device-level characterization should be able to lend insight into their properties. In this work, we use Bayesian inference to demonstrate a way to relate experimental device measurements with defect properties (as well as other materials properties affected by the presence of defects, such as minority-carrier lifetime). | |
International
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Si |
Congress
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IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) |
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960 |
Place
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Waikoloa (USA) |
Reviewers
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Si |
ISBN/ISSN
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978-1-5386-8530-3 |
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Start Date
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10/06/2018 |
End Date
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15/06/2018 |
From page
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3271 |
To page
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3275 |
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Proceedings of IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) |