Observatorio de I+D+i UPM

Descripción
We study the performance degradation of InGaAs FinFETs as they scale to sub-10 nm fin width. This is often attributed to degradation in intrinsic transport parameters. High frequency measurements, however, indicate increasingly severe oxide trapping as the fin width narrows. This is confirmed by pulsed- IV measurements. A new mobility extraction method using concurrent S-parameter and DC-IV measurements avoids the impact of oxide trapping and reveals promising mobility in thin-channel InGaAs planar MOSFETs and narrow-width FinFETs. Our study suggests that performance degradation of InGaAs FinFETs is largely an extrinsic phenomenon that can be engineered around and that the potential performance of deeply-scaled InGaAs FinFETs is significantly underestimated.
Internacional	Si
Nombre congreso	2019 Symposium on VLSI Technology
Tipo de participación	960
Lugar del congreso	Kyoto, Japan.
Revisores	Si
ISBN o ISSN	978-4-86348-717-8
DOI	10.23919/VLSIT.2019.8776578
Fecha inicio congreso	09/06/2019
Fecha fin congreso	14/06/2019
Desde la página	246
Hasta la página	247
Título de las actas	Proceedings 2019 Symposium on VLSI Technology

Esta actividad pertenece a memorias de investigación

• Autor: Xiaowei Cai (Massachusetts Institute of Technology (MIT), Cambridge, MA. USA)
• Autor: Alon Vardi (Massachusetts Institute of Technology (MIT), Cambridge, MA. USA)
• Autor: Jesus Grajal De la Fuente (UPM)
• Autor: Jesús A. del Alamo (Massachusetts Institute of Technology (MIT), Cambridge, MA. USA)

• Creador: Grupo de Investigación: Microondas y Radar
• Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
• Departamento: Señales, Sistemas y Radiocomunicaciones