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Abstract
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| Linear power amplifiers (LPA) are the preferred option in industrial applications whenever an excellent linearity, low noise operation and good stability margin are needed. The power losses of a LPA can be significantly reduced by employing switched-mode power converters to modulate its supply rails. Regarding the power devices, for a more compact solutions Enhancement-mode Gallium-Nitride High-electron-mobility Transistors (GaN E-HEMTs) are the better choice compared to the conventional Silicon (Si) devices with the same voltage rating and on-state resistance since the parasitic capacitances of GaN transistors are lower up to 10 times. Although their turn-off energy is very small, for the high switching speeds ZeroVoltage Switching (ZVS) is preferable to avoid the turn-on power losses, especially in the application where the devices operate at MHz switching frequencies and where the blocking voltages are relatively high. In this paper, an 8 W, 1 MHz switching frequency, with 80 V of output voltage swing, fully digitally controllable bipolar tracking power supply (TPS) is shown. The designed small signal bandwidth is 100 kHz and the tracking speeds reach up to 2 V/µs. The maximum efficiency of the TPS is beyond 94 % while the power stage of the TPS occupies less than 10 cm | |
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International
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Si |
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Congress
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IEEE Applied Power Electronics Conference and Exposition (APEC) |
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960 |
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Place
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Anaheim, CA, USA, USA |
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Reviewers
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Si |
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ISBN/ISSN
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1048-2334 |
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10.1109/APEC.2019.8721957 |
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Start Date
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17/03/2019 |
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End Date
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21/03/2019 |
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From page
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431 |
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To page
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436 |
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Highly Efficiente and Compact GaN-Based Tracking Power Supply System for Linear Power Amplifiers |