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Descripción
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| SCOPE AND BENEFITS In the last years we have witnessed a dramatic change in the semiconductor technology as Gallium nitride (GaN) and Silicon carbide (SiC) devices have emerged as a possible replacement for silicon devices in various power conversion applications and as an enabler of new applications not previously possible. This lecture will try to provide some answers to these questions focusing on the basic physics of GaN transistors and low-voltage (< 1000V) applications where the employment of GaN power switches brings increased energy efficiency and power density. Applications such as communication (power amplifier envelope tracking), transportation (DC-DC power converters for satellites) and renewable energy will be addressed and discussed. Experimental results for all three applications will be presented and critically assessed together with tradeoffs in performance vs. cost. Special emphasis will be given to practical issues that must be tackled when a GaN based design is performed: driver selection and common mode problems (bootstrap solutions, drivers with isolation), PCB design (critical loops, PCB manufacturing etc.), thermal issues etc. The objectives of this tutorial are to: 1. Look at the theory of HEMT device and use simple numerical analysis to demonstrate its great performance and determine the technology theoretical limits 2. Explore the practical challenges associated with switching WBG devices, creating circuit layouts, gate-drives and taking experimental measurements 3. Demonstrate how to achieve practical, efficient and reliable operation of GaN devices in high-frequency low to medium power (from few watts up to 5 kW) switching circuits 4. Discuss experimental test results and compare WBG devices to their Silicon counterparts. 5. Draw conclusions about the applicability of GaN device to real industry applications and circuits. | |
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Internacional
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Si |
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Nombre congreso
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EPE 2019 ECCE Europe y Universidad de Génova |
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Entidad organizadora
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EPE Association |
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Nacionalidad Entidad
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Sin nacionalidad |
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Lugar/Ciudad de impartición
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Génova |
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Fecha inicio
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02/09/2019 |
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Fecha fin
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06/09/2020 |