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Memorias de investigación
Artículos en revistas:
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
Año:2007
Áreas de investigación
  • Industria electrónica
Datos
Descripción
In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain-current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and drain-lag turn-on measurements are analyzed, revealing clear mechanisms of current collapse and related dispersion effects. Numerical 2-D transient simulations considering surface traps effects in a physical HEMT model have also been carried out. A comparison between experimental and theoretical results is shown. The presence of donor-type traps acting as hole traps, due to their low energy level of 0.25 eV relative to the valence band, with densities >1e20 cm-3 (>5e12 cm-2), uniformly distributed at the HEMT surface, and interacting with the free holes that accumulated at the top surface due to piezoelectric fields, accounts for the experimentally observed effects. Time constants next to 10 ms are deduced. Some additional features in the measured transient currents, with faster time constants, could not be associated with surface states.
Internacional
Si
JCR del ISI
Si
Título de la revista
IEEE T ELECTRON DEV
ISSN
0018-9383
Factor de impacto JCR
2,165
Información de impacto
Volumen
54
DOI
Número de revista
0
Desde la página
410
Hasta la página
417
Mes
SIN MES
Ranking
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Participantes
  • Participante: José Manuel Tirado (Universidad de Castilla-La Mancha)
  • Autor: Jose Ignacio Izpura Torres (UPM)
  • Participante: José Luis Sánchez de Rojas (Universidad de Castilla-La Mancha)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Ingeniería Electrónica
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