Memorias de investigación
Ponencias en congresos:
Preparation of hard magnetic materials in thin film form
Año:2007

Áreas de investigación
  • Materiales magnéticos

Datos
Descripción
We report on the preparation, by means of pulsed laser ablation deposition, of trilayers of nominal composition Cr/SmCo5/Cr//Si with thicknesses in the order of 250/240/125 nm, respectively. According to the results of the structural, chemical and magnetic characterizations performed in our as-deposited samples, the Sm-Co layer was structurally amorphous, exhibited abrupt compositional interfaces with the capping and buffering layers, and coercivities of a few hundreds of Oe. Magnetic hardness was developed upon submitting the samples to current anneals under vacuum at temperatures in the range of 540-670 °C. The hardening process was followed in detail by correlating the phase distribution, the nature of the interlayer atomic diffusion processes, the occurrence of textures and the temperature dependence of the coercive force. From our results we conclude about (i) the occurrence of a large degree of Co diffusion/ segregation, which results in the detection, from the diffraction and magnetometric results, of the presence of CoCr alloys in the treated samples, and (ii) the close correlation, evidenced from the fits of the temperature dependence of the coercive force to the micromagnetic model, between the coercivity optimization and the crystallinity enhancement of the SmCo5 grains.
Internacional
No
Nombre congreso
Latin American Workshop on Magnetism, Magnetic Materials and their Application (LAW3M) No8, (12/08/2007)
Tipo de participación
960
Lugar del congreso
Rio de Janeiro , BRASIL
Revisores
Si
ISBN o ISSN
0304-8853
DOI
Fecha inicio congreso
12/08/2007
Fecha fin congreso
16/08/2007
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Participantes

Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Propiedades ópticas, eléctricas y magnéticas de materiales y sus aplicaciones (POEMMA)
  • Departamento: Física Aplicada a las Tecnologías de la Información