Descripción
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Contrarily to current theories based on hypothetical traps where charge carriers can translocate to, this paper gives an explanation for 1/f electrical noise in solid-state devices based on well known electrical effects taking place in these devices. A parasitic capacitor and the backgating effect of its thermal noise, both overlooked in the course of the years, are the basis of the above explanation. The above effect produces a resistance noise with a Lorentzian spectrum in any unbiased resistor. As soon as the resistor is biased, this spectrum is scattered into a continuous set of Lorentzian noise terms that synthesize 1/f noise over a frequency band that is an exponential function of the bias voltage V-DS expressed in thermal units V-T. This is due to the exponential dependence of the dynamical resistance in most semiconductor junctions. A V-DS= 180MV is thus enough to give 1/f noise over three decades at room temperature. This unexpected and non-linear feature, where the spectrum of this noise results from the own bias used to measure it, has kept IN noise as a puzzling and enigmatic noise for more than eighty years. The above theory, born in the solid-state field, can also be generalized to other devices where two orthogonal forces or energy gradients appear while electrical noise is being measured. | |
Internacional
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Si |
Nombre congreso
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Conference on VLSI Circuits and Systems III |
Tipo de participación
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960 |
Lugar del congreso
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Maspalomas. ESPAÑA |
Revisores
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Si |
ISBN o ISSN
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DOI
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Fecha inicio congreso
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02/05/2007 |
Fecha fin congreso
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04/05/2007 |
Desde la página
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Título de las actas
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