Observatorio de I+D+i UPM

Descripción
This paper presents two MMIC broadband high power amplifiers of 4 mm of periphery at the output stage in the frequency band 2-6 GHz. The amplifiers are based on Al-GaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They have been fabricated in two different european fondries: SELEX Sistemi Integrati and QINETIQ. SELEX has a gate process technology of 0.5 um, and devices of 10x100um periphery in microstrip technology and QINETIQ has a gate-length of 0.25mu, and devices of 8x125um in coplanar technology. The coplanar amplifier from QINETIQ has demonstrated an output power of 8W in continuous wave at Vds=20V which confirm model predictions. On the other hand, SELEX microstrip amplifier has a saturation power of 10W CW at Vds=25V and 4 GHz. This amplifier measured on-wafer in pulsed conditions exhibits a maximum power of 17W at Vds=30V.
Internacional	Si
Nombre congreso	European Microwave Integrated Circuits Conference
Tipo de participación	960
Lugar del congreso	Amsterdam, Paises Bajos
Revisores	Si
ISBN o ISSN	978-2-87487-007-1
DOI	10.1109/EMICC.2008.4772234
Fecha inicio congreso	27/10/2008
Fecha fin congreso	31/10/2008
Desde la página	83
Hasta la página	86
Título de las actas	Proceedings of the 3rd European Microwave Integrated Circuits Conference

Esta actividad pertenece a memorias de investigación

• Autor: Antonio Cetronio (SELEX-SI)
• Autor: Mike Uren (QUINETIQ)
• Autor: Jesus Grajal De la Fuente (UPM)
• Autor: Pablo Cubilla (INDRA)
• Autor: María Angeles González Garrido (UPM)
• Autor: Claudio Lanzieri (SELEX-SI)

• Creador: Grupo de Investigación: Microondas y Radar
• Departamento: Señales, Sistemas y Radiocomunicaciones