Memorias de investigación
Communications at congresses:
Capabilities of GaN Schottky Multipliers for LO Power Generation at Millimeter-Wave Bands
Year:2008

Research Areas
  • Processing and signal analysis

Information
Abstract
Gallium Nitride (GaN) is a very promising material for either electronic and optoelectronic devices because of its high breakdown field, and peak and saturated electron drift velocity. Hence, despite of its lower electron mobility, GaN Schottky diodes might represent a good alternative to GaAs Schottky diodes for LO power generation at millimetre-wave bands fue to a much better power handling capabilities. Results from numerical simulations for a 200 GHz doubler predict a 25% lower conversion efficiency for GaN Schottky multipliers when compared to GaAs Schottky multipliers. However, higher power handling capabilities, an order of magnitude higher than GaAs with same anode sizes, are predicted for GaN diodes.
International
Si
Congress
19th International Symposium on Space Terahertz Technology (ISSTT 2008)
960
Place
Groningen, The Netherlands
Reviewers
Si
ISBN/ISSN
1652-0769
Start Date
28/04/2008
End Date
30/04/2008
From page
504
To page
507
Proceedings of 19th International Symposium on Space Terahertz Technology (ISSTT 2008)
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microondas y Radar
  • Departamento: Señales, Sistemas y Radiocomunicaciones