Memorias de investigación
Communications at congresses:
Piezoelectric Microresonators Based on Aluminim Nitride for Mass Sensing Applications
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
In this work we analyze the vibrational behavior of microresonators (cantilevers and bridges) actuated with piezoelectric aluminum nitride (AlN) films, to investigate the suitability of these devices as mass sensors. The resonators of different geometries consisted of a freestanding unimorph structure made up of a metal/AlN/metal piezoelectric stack supported by a Si3N4 structural layer. The out-of-plane motion of the resonators was assessed by laser interferometry. The electrical impedance of the devices exhibited significant variations at some resonant frequencies ranging from 0.5 MHz to 13 MHz. The mass sensitivity of the microresonators was evaluated through the frequency shift of the resonant modes when loading the resonators with SiO2 films. High order resonant modes provided higher mass sensitivities, with values as low as 6 ag/Hz, which improved significantly our previous results.
International
Si
Congress
IEEE SENSORS 2008 Conference
960
Place
Lecche, Italia
Reviewers
Si
ISBN/ISSN
978-1-4244-2580-8
10.1109/ICSENS.2008.4716483 Summary: In this wor
Start Date
26/10/2008
End Date
28/10/2008
From page
486
To page
489
IEEE SENSORS 2008 Conference Proceedings
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Sistemas Electrónicos y de Control
  • Departamento: Tecnología Electrónica
  • Departamento: Ingeniería Electrónica