Observatorio de I+D+i UPM

Descripción
Frequently,whengrowingIII–Vsemiconductorsongermaniumsubstrates,unexpecteddifferences between nominallyidenticalsubstratesareencountered.Usingatomicforcemicroscopy(AFM),wehave analysed asetofgermaniumsubstratessharingthesamespecifications.Thesubstratescomefromthe same vendorbutdifferentresultscomeaboutintermsofthemorphologyoftheepilayersproducedby the sameepitaxialroutine(i.e. substrateW1 producedepilayerswithgoodmorphologywhile substrate WX produced epilayerswithdefects).Themorphologicalanalysishasbeencarriedouton(a)epiready substrates; (b)samplesafterahigh-temperaturebakeat700 1C; and(c)onthesamplesafterahydride (PH3) annealingat640 1C. Inthetwofirststagesallsubstrates(both W1 and WX) showthesamegood morphologywithRMSroughnessbelow3A˚ in allcases.Itisinthethirdstage(annealinginPH3) that the morphologydegradesandthedifferencesbetweenthesamplesbecomeapparent.Afterphosphine exposureat640 1C, theRMSroughnessofbothsubstratesapproximatelydoubles,andtheirsurface appearsasfullofpeaksandvalleysonthenanometrescale.Despitethegeneralappearanceofthe samplesbeingsimilar,acarefulanalysisoftheirsurfacerevealsthatthesubstratesthatproducebad morphologies(WX) showhigherpeaks,andsomeoftheirroughnessparameters,namely,surface kurtosis andthesurfaceskewness,areconsiderablydegraded.
Internacional	Si
JCR del ISI	Si
Título de la revista	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
Factor de impacto JCR	1,95
Información de impacto
Volumen	310
DOI
Número de revista	23
Desde la página	4803
Hasta la página	4807
Mes	ENERO
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• Autor: Ignacio Rey-Stolle Prado (UPM)
• Autor: Beatriz Galiana Blanco (UPM)
• Autor: Carlos Algora Del Valle (UPM)
• Autor: Enrique Barrigon Montañes (UPM)

• Creador: Grupo de Investigación: Semiconductores III-V
• Centro o Instituto I+D+i: Instituto de Energía Solar
• Departamento: Electrónica Física