Descripción
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Frequently,whengrowingIII–Vsemiconductorsongermaniumsubstrates,unexpecteddifferences between nominallyidenticalsubstratesareencountered.Usingatomicforcemicroscopy(AFM),wehave analysed asetofgermaniumsubstratessharingthesamespecifications.Thesubstratescomefromthe same vendorbutdifferentresultscomeaboutintermsofthemorphologyoftheepilayersproducedby the sameepitaxialroutine(i.e. substrateW1 producedepilayerswithgoodmorphologywhile substrate WX produced epilayerswithdefects).Themorphologicalanalysishasbeencarriedouton(a)epiready substrates; (b)samplesafterahigh-temperaturebakeat700 1C; and(c)onthesamplesafterahydride (PH3) annealingat640 1C. Inthetwofirststagesallsubstrates(both W1 and WX) showthesamegood morphologywithRMSroughnessbelow3A˚ in allcases.Itisinthethirdstage(annealinginPH3) that the morphologydegradesandthedifferencesbetweenthesamplesbecomeapparent.Afterphosphine exposureat640 1C, theRMSroughnessofbothsubstratesapproximatelydoubles,andtheirsurface appearsasfullofpeaksandvalleysonthenanometrescale.Despitethegeneralappearanceofthe samplesbeingsimilar,acarefulanalysisoftheirsurfacerevealsthatthesubstratesthatproducebad morphologies(WX) showhigherpeaks,andsomeoftheirroughnessparameters,namely,surface kurtosis andthesurfaceskewness,areconsiderablydegraded. | |
Internacional
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JCR del ISI
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Si |
Título de la revista
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JOURNAL OF CRYSTAL GROWTH |
ISSN
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0022-0248 |
Factor de impacto JCR
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1,95 |
Información de impacto
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Volumen
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310 |
DOI
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Número de revista
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23 |
Desde la página
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4803 |
Hasta la página
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4807 |
Mes
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ENERO |
Ranking
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