Memorias de investigación
Research Publications in journals:
Analysis of germanium epiready wafers for III-V heteroepitaxy
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
Frequently,whengrowingIII–Vsemiconductorsongermaniumsubstrates,unexpecteddifferences between nominallyidenticalsubstratesareencountered.Usingatomicforcemicroscopy(AFM),wehave analysed asetofgermaniumsubstratessharingthesamespecifications.Thesubstratescomefromthe same vendorbutdifferentresultscomeaboutintermsofthemorphologyoftheepilayersproducedby the sameepitaxialroutine(i.e. substrateW1 producedepilayerswithgoodmorphologywhile substrate WX produced epilayerswithdefects).Themorphologicalanalysishasbeencarriedouton(a)epiready substrates; (b)samplesafterahigh-temperaturebakeat700 1C; and(c)onthesamplesafterahydride (PH3) annealingat640 1C. Inthetwofirststagesallsubstrates(both W1 and WX) showthesamegood morphologywithRMSroughnessbelow3A˚ in allcases.Itisinthethirdstage(annealinginPH3) that the morphologydegradesandthedifferencesbetweenthesamplesbecomeapparent.Afterphosphine exposureat640 1C, theRMSroughnessofbothsubstratesapproximatelydoubles,andtheirsurface appearsasfullofpeaksandvalleysonthenanometrescale.Despitethegeneralappearanceofthe samplesbeingsimilar,acarefulanalysisoftheirsurfacerevealsthatthesubstratesthatproducebad morphologies(WX) showhigherpeaks,andsomeoftheirroughnessparameters,namely,surface kurtosis andthesurfaceskewness,areconsiderablydegraded.
International
Si
JCR
Si
Title
JOURNAL OF CRYSTAL GROWTH
ISBN
0022-0248
Impact factor JCR
1,95
Impact info
Volume
310
Journal number
23
From page
4803
To page
4807
Month
ENERO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física