Abstract
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The orderingphenomenonproducesareductioninthebandgapoftheGaInPmaterial.Thougha drawbackformanyoptoelectronicapplications,orderingcanbeusedasanadditionaldegreeofmaterial and deviceengineeringfreedom.TheperformanceoftherecordefficiencyGaInP/GaAs/Gemultijunction solar cellsdependsonthequalityanddesignoftheGaInPtopcell,whichcanbeaffectedalsoby ordering. Thetradeoffexistingbetweenbandgapandminoritycarrierproperties,andthepossibilityof creating abacksurfacefield(BSF)structurebasedonanorder¿disorderGaInPheterostructuremakes the studyoftheorderingappealingforsolarcellapplications.Inthiswork,theorderingdependency with thegrowthconditionsandsubstrateorientationisstudied.Theresultsobtainedarepresentedto enrich andextendthedataavailableintheliterature.Thenthepropertiesoforder¿disorderGaInP heterostructuresareassessedbyusingthemasBSFinGaInPconcentratorsolarcells.Theexternal quantumefficiency(EQE)showsagoodbehavioroftheseBSFlayers,butunexpectedlypoorelectronic qualityintheactivelayers.Althoughtheexactoriginofthisproblemremainstobeknown,itis attributedtotrapsintroducedbytheordered/disordereddomainsmatrixorgrowthnativedefects.EQE measurementswithbiaslightshowarecoveryoftheminoritycarrierproperties,presumablyduetothe saturation ofthetraps. | |
International
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Si |
JCR
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Si |
Title
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JOURNAL OF CRYSTAL GROWTH |
ISBN
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0022-0248 |
Impact factor JCR
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1,95 |
Impact info
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Volume
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310 |
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Journal number
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23 |
From page
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5209 |
To page
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5213 |
Month
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ENERO |
Ranking
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