Descripción
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The orderingphenomenonproducesareductioninthebandgapoftheGaInPmaterial.Thougha drawbackformanyoptoelectronicapplications,orderingcanbeusedasanadditionaldegreeofmaterial and deviceengineeringfreedom.TheperformanceoftherecordefficiencyGaInP/GaAs/Gemultijunction solar cellsdependsonthequalityanddesignoftheGaInPtopcell,whichcanbeaffectedalsoby ordering. Thetradeoffexistingbetweenbandgapandminoritycarrierproperties,andthepossibilityof creating abacksurfacefield(BSF)structurebasedonanorder¿disorderGaInPheterostructuremakes the studyoftheorderingappealingforsolarcellapplications.Inthiswork,theorderingdependency with thegrowthconditionsandsubstrateorientationisstudied.Theresultsobtainedarepresentedto enrich andextendthedataavailableintheliterature.Thenthepropertiesoforder¿disorderGaInP heterostructuresareassessedbyusingthemasBSFinGaInPconcentratorsolarcells.Theexternal quantumefficiency(EQE)showsagoodbehavioroftheseBSFlayers,butunexpectedlypoorelectronic qualityintheactivelayers.Althoughtheexactoriginofthisproblemremainstobeknown,itis attributedtotrapsintroducedbytheordered/disordereddomainsmatrixorgrowthnativedefects.EQE measurementswithbiaslightshowarecoveryoftheminoritycarrierproperties,presumablyduetothe saturation ofthetraps. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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JOURNAL OF CRYSTAL GROWTH |
ISSN
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0022-0248 |
Factor de impacto JCR
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1,95 |
Información de impacto
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Volumen
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310 |
DOI
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Número de revista
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23 |
Desde la página
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5209 |
Hasta la página
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5213 |
Mes
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ENERO |
Ranking
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