Memorias de investigación
Communications at congresses:
Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
Year:2008

Research Areas
  • Electronics engineering

Information
Abstract
RELACIONADO CON LINEA DE INVESTIGACIÓN DEL GRUPO
International
Si
Congress
Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS)
960
Place
Friburgo (Alemania), 2008
Reviewers
Si
ISBN/ISSN
0000-0000
Start Date
21/09/2008
End Date
24/09/2008
From page
0
To page
0
Enhancement of N incorporation into (Ga)InAsN quantum dots
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica