Memorias de investigación
Ponencias en congresos:
Aluminium Nitride Solidly Mounted BAW Resonators with Iridium Electrodes
Año:2008
Áreas de investigación
  • Industria electrónica
Datos
Descripción
In this work we investigated the performance of aluminium nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) bottom electrodes. Ir/AlN/metal stacks were grown on top of insulating Bragg mirrors composed of alternate λ/4 layers of silicon oxi-carbide (SiOC) and silicon nitride (Si3N4). Ir electrodes of various thicknesses were electron-beam evaporated on different adhesion layers, which also acted as seed layers. AlN was deposited by sputtering after conditioning the Ir electrode by a soft-etch with Ar+ ions, which was essential to achieve high quality AlN films. The structure and morphology of the different layers were analysed by x-ray diffraction (XRD) and atomic force microscopy (AFM). The frequency response of the SMRs was assessed by measuring the input scattering parameter S11 with a network analyzer. The experimental results were fitted to the Butterworth-Van Dyke circuital model. The effective electromechanical coupling factor k2 eff, and the quality factor Q of the resonators were derived from the experimental data. The influence of the thickness, crystal quality and roughness of the Ir bottom electrode
Internacional
Si
Nombre congreso
European Frequency and Time Forum (EFTF) 2008
Tipo de participación
960
Lugar del congreso
Toulouse (FRANCIA)
Revisores
Si
ISBN o ISSN
3-9805741-8-0
DOI
Fecha inicio congreso
22/04/2008
Fecha fin congreso
25/04/2008
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Título de las actas
European Frequency and Time Forum (EFTF) 2008 Proceedings
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica