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Abstract
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| Photovoltaic conversion efficiencies of32,6% and 30% at concentrations of 1000 and 3500 suns respectively, are achieved in monolithic GaInP/GaAs dual junction solar cells grown lattice matches on a GaAs substrate by metal-organic vapor-phase epitaxy. | |
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International
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Si |
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JCR
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Si |
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Title
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APPLIED PHYSICS LETTERS |
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ISBN
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0003-6951 |
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Impact factor JCR
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3,726 |
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Impact info
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Volume
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94 |
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Journal number
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0 |
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From page
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053509-1 |
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To page
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053509-3 |
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Month
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FEBRERO |
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Ranking
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