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Abstract
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| In this paper, the benefits of the ultra high concentration (> 1000 suns) are shown in terms of cost reduction and efficiency increase. Accordingly, the strategy followed at IES-UPM for more than 15 years is the development of III-V solar cells suitable for operation at 1000 suns or more. Recently, we have developed and manufactured a GaInP/GaAs dual-junction cell which results in an efficiency (measured at the Calibration Laboratory, CalLab, of Fraunhofer Institute in Freiburg) of 32.6% for a concentration range going from 499 to 1026 suns. This efficiency is the world record efficiency for a dual-junction solar cell. Besides, the efficiency is still as high as 31% at 3000 suns. The theoretical optimization of this solar cell (based on an accurate modelling) shows a potential efficiency over 36% at 1000 suns. We have extended this strategy to lattice-matched GaInP/Ga(In)As/Ge triple junction solar cells. First manufactured cells exhibit an efficiency of 31.5% at 1000 suns. The theoretical optimization of this cells show that an efficiency over 43% at 1000 suns is achievable. A roadmap has been established in order to reach this value. | |
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International
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Si |
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Congress
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34th IEEE Photovoltaic Specialists Conference |
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960 |
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Place
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Philadelphia, USA |
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Reviewers
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Si |
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ISBN/ISSN
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978-1-4244-2950-9 |
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Start Date
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07/06/2009 |
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End Date
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12/06/2009 |
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From page
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1571 |
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To page
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1575 |
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Proceedings of the Congress |