|
Abstract
|
|
|---|---|
| The simulation of the quantum efficiency and the I-V curves at several concentrations of a high efficiency concentrator dual-junction solar cell is presented using three different approaches: 1) analytic simulation with the one-diode model; 2) analytic simulation with distributed circuit models; and, 3) numerical simulation. The main advantages and limitations of each model are discussed and their performance is compared | |
|
International
|
Si |
|
Congress
|
34th IEEE Photovoltaic Specialists Conference |
|
|
960 |
|
Place
|
Philadelphia, USA |
|
Reviewers
|
Si |
|
ISBN/ISSN
|
978-1-4244-2950-9 |
|
|
|
|
Start Date
|
07/06/2009 |
|
End Date
|
12/06/2009 |
|
From page
|
1622 |
|
To page
|
1627 |
|
|
Proceedings Conference |