Observatorio de I+D+i UPM

Descripción
A gold-free metallization is proposed to be used as the grid contact in III¿V concentrator solar cells. This metallization is based on the Cu/Ge system which has been reported to attain very low specific contact resistances on n-GaAs. In this letter, we show that metal layers with low resistivity (13 μΩ cm) can be obtained if the copper content in the alloy is around 28% in weight for a wide range of annealing temperatures (400¿450 °C). Finally, this metallization has been used to manufacture single-junction GaAs high concentrator solar cells. Efficiencies of 26.2% at 1000 suns have been reached.
Internacional	Si
JCR del ISI	Si
Título de la revista	SOL ENERG MAT SOL C
ISSN	0927-0248
Factor de impacto JCR	2,002
Información de impacto
Volumen	91
DOI
Número de revista	9
Desde la página	847
Hasta la página	850
Mes	MAYO
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Esta actividad pertenece a memorias de investigación

• Autor: Carlos Algora Del Valle (UPM)
• Autor: Ignacio Rey-Stolle Prado (UPM)
• Autor: Beatriz Galiana Blanco (UPM)

• Creador: Grupo de Investigación: Semiconductores III-V
• Centro o Instituto I+D+i: Instituto de Energía Solar
• Departamento: Electrónica Física