Memorias de investigación
Artículos en revistas:
Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
Año:2011
Áreas de investigación
  • Caracterizacion,
  • Sintesis
Datos
Descripción
In this work, we analyze the in¿uence of the processing pressure and the substrate¿target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin ¿lms deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HRXRD). The ¿lms exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature¿ an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin ¿lms of different thickness. The degree of c-axis orientation was not affected by the target¿substrate distance as it was varied in between 30 and 70 mm.
Internacional
Si
JCR del ISI
Si
Título de la revista
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
ISSN
0946-7076
Factor de impacto JCR
1,025
Información de impacto
Volumen
17
DOI
10.1007/s00542-010-1198-2
Número de revista
3
Desde la página
381
Hasta la página
386
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  • Creador: Departamento: Ingeniería Electrónica