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Descripción
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| A semiconductor simulation tool based on Monte Carlo techniques has been used to analyse the performance of frequency multipliers in the millimetre-wave frequency range. Both power generation and noise properties have been compared for GaAs and GaN-based doublers. GaN could be an interesting option for frequency multiplication: efficiencies around 15 % can be reached for state-of-the-art carrier mobilities and noise performance is better than in GaAs-based doublers. | |
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Internacional
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Si |
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Nombre congreso
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21st International Symposium on Space Terahertz Technology |
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Tipo de participación
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960 |
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Lugar del congreso
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Oxfordshire, UK |
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Revisores
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Si |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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23/03/2010 |
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Fecha fin congreso
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25/03/2010 |
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Desde la página
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1 |
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Hasta la página
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4 |
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Título de las actas
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ISSTT Proceedings 2010 |