Abstract
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Recently analytical behavioral model formulation based on the PHD model has been introduced and successfully used to describe the nonlinear behavior of transistors and components. The next important advance would be to utilize this formulation, constraint to load-independent X parameters, to enable analytical non-linear microwave circuit design procedures. For this purpose, in this paper a blind iterative process is presented and validated in order to obtain the appropriate load-independent X parameters, focused around the chosen optimum impedance condition, necessary to enable accurate analytical non-linear circuit design to be undertaken. | |
International
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Si |
Entity
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IET Seminar on Active RF Devices, circuits and systems 2011 |
Place
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Belfast |
Pages
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Reference/URL
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Publication type
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Seminar |