Observatorio de I+D+i UPM
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INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Marko Jak Tadjer .
Categoría Investigador
DOCTOR CONTRATADO PROGRAMA OFICIAL
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERIA ELECTRONICA (ANTIGUO)
Area Conocimiento
SIN AREA DE CONOCIMIENTO
Grupo de Investigación:
Sin grupo de investigación
Email (Directorio UPM)
marko.tadjer
upm.es
Investigador no vigente en la UPM
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
5 Proyectos de I+D+i
1: (2011)
'Contrato postdoctoral del Dr. Marko Tadjer. Temática: Tecnología de transistores basados en nitruros del grupo III''. Entidad: Profs. Germán González y Álvaro de Prado, Dpto. Física Aplicada III, Facultad de Ciencias Físicas, Universidad Complutense de Madrid. Código: contrato postdoctoral (Abril de 2011). IP: Fernando Calle.
2: (2012)
Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
3: (2012)
Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
4: (2012)
Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
5: (2015)
CAVE: Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
Formación de Investigadores y Movilidad
3 Estancias y sabáticos recogidos en programas oficiales
1: (2012)
ESTANCIA INVESTIGADORA DR. MARKO JAK TADJER- EN NAVAL RESEARCH LABORATORY
2: (2012)
ESTANCIA INVESTIGADORA DR. MARKO JAK TADJER- EN NAVAL RESEARCH LABORATORY
3: (2012)
ESTANCIA INVESTIGADORA EN NAVAL RESEARCH LABORATORY.- Dr. MARKO JAK TADJER
Difusión de Resultados de Investigación
23 Artículos en revistas
1: (2011)
Quantifying pulsed laser induced damage to grapheme
2: (2011)
Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
3: (2011)
Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
4: (2012)
Electrical Characterization of the Graphene-SiC Heterojunction
5: (2012)
Investigation of the Epitaxial Graphene/p-SiC Heterojunction
6: (2012)
ProFIling the Temperature Distribution in AlGaN/GaN HEMTs with Nanocrystalline Diamond Heat Spreading Layers
7: (2012)
Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures
8: (2013)
Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
9: (2013)
Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
10: (2013)
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
11: (2013)
Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
12: (2013)
Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
13: (2013)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
14: (2013)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
15: (2013)
Impact of intrinsic stress in diamond capping layers on the electrical behavior of AlGaN/GaN HEMTs
16: (2013)
Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs
17: (2013)
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
18: (2013)
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
19: (2013)
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
20: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
21: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
22: (2014)
MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates
23: (2015)
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
5 Conferencias invitadas en congresos
1: (2010)
M. TADJER, F. CALLE "Overview III-N HEMTs: device design" Consolider RUE Workshop on WBS for Power Applications. CNM, Barcelona, Barcelona (Spain) 2010.
2: (2010)
F. CALLE, M. TADJER. "Overview III-N HEMTs: materials and technology". Consolider RUE Workshop on WBS for Power Applications, CNM Barcelona (Spain) 2010.
3: (2011)
Time-Reversal-Based Multipath Mitigation Technique for Entropy Minimization of SAR Images
4: (2012)
Heat spreading in III-nitride HEMTs by diamond integration
5: (2012)
Short term applications of graphene
1 Cursos, seminarios y tutoriales
1: (2010)
MARKO JAK TADJER. "Diamond and Self-heating in AlGaN-GaN HEMTs". 30/04/2010. ISOM-ETSIT-UPM. Madrid (España)
30 Ponencia en Congresos
1: (2010)
M. J. TADJER, R. CUERDO, T. J. ANDERSON, K. D. HOBART, S. MARTÍN-HORCAJO, F. CALLE "Comparative study of threshold voltage stability in enhancement mode AlGaN/GaN HEMTs". Int. Workwhop on Nitrides Tampa (EEUU), 2010
2: (2010)
S. MARTÍN-HORCAJO, M. J. TADJER, R. CUERDO, M. F. ROMERO, F. CALLE "Evaluation of the thermal stability in D-mode and E-mode HEMTs based on AlGaN/GaN" 19th European Workshop on Hetectostructure HETECH 2010 Creta (Greece), 2010
3: (2011)
Cryogenic behaviour of nanocrystalline diamond and epitaxial graphene Schottky contacts to 4H-SiC
4: (2011)
Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
5: (2011)
Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs
6: (2011)
High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs
7: (2011)
High temperature pulsed and DC performance of AlInN/GaN HEMTs
8: (2011)
Method of Channel Temperature and Thermal Resistance Extraction in AlGaN/GaN HEMTs
9: (2011)
Method of channel temperature and thermal resistance extraction in AlGaN/GaN HEMTs
10: (2011)
Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT¿s reliability
11: (2011)
2D Channel Modulation of AlInN/GaN HEMTs Using a Selective Recess Etch
12: (2011)
2D channel modulation of AlInN/GaN HEMTs using a selective recess etch
13: (2012)
Electrical and Surface Characterization of Wet-etched InAlN/AlN/GaN HEMTs
14: (2012)
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
15: (2012)
Gate oxide stability of 4H-SiC MOSFETs under on/oFF-state bias-temperature stress
16: (2012)
Heat Spreading in III-Nitride HEMTs by Diamond Integration
17: (2012)
Improved GaN-based HEMT Performance by Nanocrystalline Diamond Capping
18: (2012)
Nanocrystalline diamond integration in III-Nitride HEMTs
19: (2012)
ProFIling the Temperature Distribution in AlGaN/GaN HEMTs with Nanocrystalline Diamond Heat Spreading Layers
20: (2012)
Pulsed Optical Damage of Graphene
21: (2012)
Simulation of thermal management in AlGaN/GaN HEMTs
22: (2012)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
23: (2012)
Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
24: (2012)
Thermionic and FIeld emission from nanocrystalline diamond and epitaxial graphene into epitaxial 4H-SiC.
25: (2012)
Vertical Conduction Mechanism of Epitaxial Graphene Heterojunctions to 4H-SiC
26: (2013)
Application and Modeling of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
27: (2013)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
28: (2013)
MnO2-based electrochemical supercapacitors on flexible carbon substrates
29: (2013)
Thermal stability of GaN on-Si HEMTs with different cap layers: GaN, in situ SiN, and in situ SiN/GaN
30: (2013)
Thermal stability of GaN on-Si HEMTs with different in situ cap layers
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