Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Sergio Fernandez Garrido
Categoría Investigador
DOCTOR CONTRATADO PROGRAMA OFICIAL (Ramón y Cajal (Ministerio))
Escuela UPM
E.T.S. DE ING. DE CAMINOS CANALES Y P.
Departamento:
CIENCIA DE MATERIALES (N)
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
SIN AREA DE CONOCIMIENTO
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
sergio.fernandezga
upm.es
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
14 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC, ADICIONAL
3: (2007)
"Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875
4: (2007)
"Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875. ADICIONAL
5: (2007)
"Fabricación de substratos nanoestructurados de SiO2 para crecimiento Epitaxial de emisores eficientes de Luz Blanca con Nitruros del Grupo-III" Ministerio de Industria,Turismo y Comercio, PROFIT- 2007. FIT-330100-2007-134 (2007-2008).
6: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
7: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
8: (2007)
"Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
9: (2007)
"Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
10: (2007)
"Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
11: (2008)
Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)
12: (2008)
Fabricación de substratos nanoestructurados de SiO2 para crecimiento epitaxial de emisores eficientes de Luz Blanca con Nitruros del Grupo-III
13: (2008)
Nanoestructuras de semiconductores como componentes para la información cuántica
14: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
Formación de Investigadores y Movilidad
1 Tesis Doctorales
1: (2009)
SERGIO FERNÁNDEZ-GARRIDO "Crecimiento de nitruros del grupo III por epiaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta"
Difusión de Resultados de Investigación
32 Artículos en revistas
1: (2007)
E. CALLEJA, J. RISTIC, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 1521-3951
2: (2007)
G. KOBLMÜLLER, F. WU, T. MATES, J.S. SPECK, S. FERNANDEZ-GARRIDO, E. CALLEJA "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy" Applied Physics Letters, 91, 221905-221907 (2007) ISSN: 0003-6951
3: (2007)
G. KOBLMÜLLER, J.S. SPECK , S. FERNANDEZ-GARRIDO, E. CALLEJA "In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN" Applied Physics Letters, 91, 161904-161906 (2007) ISSN: 0003-6951
4: (2007)
J. PEREIRO, C. RIVERA, J.L. PAU, A. NAVARRO, S. FERNANDEZ - GARRIDO, S. GRZANKA, M. LESZCZYNSKI, E. MUÑOZ "Design Of Ingan Based Photodetectors By Internal Field Engineering".2007 Spanish Conference on Electron Devices IEEE Proceedings 296-299, ISBN: 1-4244-0868-7 (2007)
5: (2007)
J. PEREIRO, C. RIVERA, J.L. PAU, A. NAVARRO, S. FERNÁNDEZ-GARRIDO, S. GRZANKA, M. LESZCZYNSKI, E. MUÑOZ "Design of InGaN based photodetectors by internal field engineering" IEEE Electron Devices, Conf Proc- 2007 Spanish Conference, 296-299 (2007) ISSN: 0741-3106
6: (2007)
J.M. CALLEJA, S. LAZIC, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIC, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
7: (2007)
J.M. CALLEJA, S. LAZIĆ, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
8: (2008)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
9: (2008)
Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy
10: (2008)
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
11: (2008)
Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
12: (2008)
In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
13: (2008)
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
14: (2008)
Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
15: (2009)
A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P.J.M. SMULDERS, E. MUÑOZ, E. CALLEJA, E. ALVES "Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling" J. Phys. D: Appl. Phys., 42 (6), 065420-1/8 (2009)
16: (2009)
A.REDONDO-CUBERO, K LORENZ, R GAGO, N FRANCO, S. FERNÁNDEZ-GARRIDO, P.J.M. SMULDERS, E. MUÑOZ, E. CALLEJA, I.M. WATSON, E. ALVES "Breakdown of anamalous channeeling with ion energy for accurate strain determination in GaN-based heterostructures" Applied Physics Letters, 95, 051921-3 (2009)
17: (2009)
F.B.NARANJO, M.GONZÁLEZ-HERRÁEZ, S.VALDUEZA-FELIP, H.FERNÁNDEZ, J.SOLIS, S. FERNÁNDEZ, E.MONROY, J.GRANDAL, M.A.SÁNCHEZ-GARCÍA "Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 mm" Microelectronics Journal 40, 349-352 (2009)
18: (2009)
P.R. EDWARDS, R.W. MARTIN, K. BEJTKA, K.P. O.DONNELL, S. FERNÁNDEZ-GARRIDO, E. CALLEJA. "Correlating Composition and Luminescence Variations in AlInGaN epilayers" Superlattices and Microstructures 45, 151-1, 151-5 (2009)
19: (2009)
S. FERNÁNDEZ-GARRIDO, J. GRANDAL, E. CALLEJA, M.A. SÁNCHEZ-GARCÍA, D. L. ROMERO "A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)" Journal of Applied Physics, 106, 126102-1, 126102-3 (2009)
20: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E. LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" Physica status Solidi (c), 6, S2, S643-S645 (2009)
21: (2010)
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
22: (2010)
J. PEREIRO, A. REDONDO-CUBERO, S. FERNANDEZ-GARRIDO, C. RIVERA, A. NAVARRO, E. MUNOZ, E. CALLEJA, R. GAGO, "Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes" Journal of Physics D: Applied Physics, 43, 33, 335101 (2010)
23: (2010)
Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes
24: (2010)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, D. HOSSEINI, S. ESTRADE, F. PEIRÓ, E. CALLEJA ''InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam Epitaxy'' Journal of Applied Physics, 108, 113117 (2010).
25: (2011)
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
26: (2011)
InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
27: (2011)
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
28: (2011)
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
29: (2012)
A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
30: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
31: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
32: (2013)
Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
1 Capítulos de libros
1: (2007)
S. FERNÁNDEZ-GARRIDO, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, J. PEREIRO, F. GONZÁLEZ-POSADA, E. MUÑOZ. "Propeties and growth by plasma assisted molecular beam epitaxy of quaternary III-Nitrides". In Nitrides and dilute nitrides: Growth, physics and devices, J. Miguel-Sánchez, editor, Research Signpost, Singapore (2007)
1 Conferencias invitadas en congresos
1: (2010)
E. CALLEJA, A. BENGOECHEA-ENCABO, J. GRANDAL, S. FERNÁNDEZ, J. RISTIC, M.A. SANCHEZ-GARCÍA, F. BARBAGINI, P. LEFEBVRE, J.M. CALLEJA, E. GALLARDO, E.LUNA, A. TRAMPERT, U.JAHN. "Spontaneous and ordered growth of III-N nanocolumns by MBE: growth mechanisms and applications to Optoelectronic Devices". International Workshop on Nitride Semiconductors (IWNS 2010) Tampa, Florida (USA) 2010
28 Ponencia en Congresos
1: (2007)
A. Redondo-Cubero, R. Gago, F. González-Posada, S. Fernández-Garrido, A. Muñoz-Martín, A. F. Braña, U. Kreissig, D. Grambole, E. Muñoz "Ion Beam Analysis Of Ternary And Quaternary Alingan/Gan Heterostructures For High-Power Electronic Devices"European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
2: (2007)
G.Koblmueller, S. Fernandez-Garrido, J. S. Brown, E.Calleja, J. S. Speck "Improved growth mode diagram for plasma-assisted MBE growth of (0001) GaN"14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
3: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernández-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Design, by internal field engineering, of InGaN based photodetectors" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
4: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernandez-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Growth And Characterization Of (In,Ga)N Based Photodetectors Designed By Internal Field Engineering" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (España) 5 al 7 de marzo de 2007
5: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernández-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Design, by internal field engineering, of InGaN based photodetectors" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
6: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernandez-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Design Of Ingan Based Photodetectors By Internal Field Engineering" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
7: (2007)
J. Ristic, C. Rivera, S. Fernández-Garrido, E. Calleja, A. Trampert, K. H. Ploog, M- Povoloskyi, A. Di Carlo ¿Improved growth mode diagram for plasma-assisted MBE growth of (0001) GaN¿ 7th International Conference on Nitride Semiconductors Bremen (Alemania) 16 al 21 de septiembre de 2007
8: (2007)
K. Bejtka, R.W. Martin, S. Fernández-Garrido, A. Redondo-Cubero, F. González-Posada, E. Calleja "Composition and luminescence of AlInGaN layers grown by MBE" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
9: (2007)
K. Bejtka, R.W. Martin, S. Fernández-Garrido, E. Calleja, A. Redondo-Cubero, F. González-Posada "Composition and luminescence of AlInGaN layers grown by PA-MBE" United Kingdom Nitride Consortium 2007 Cambridge (U.K) 4 al 5 de enero de 2007
10: (2007)
M. Utrera, J. Ristić, S. Fernández-Garrido, L. Cerutti, G. Fuentes, E. Calleja, A. Trampert, U. Jahn, K. H. Ploog "Ordered growth of GaN Nanostructures on Si by MBE" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (España) 5 al 7 de marzo de 2007
11: (2007)
S. Fernández-Garrido, G. Koblmüller, E. Calleja, J. S. Speck ¿In-Situ Gan Decomposition Analysis By Quadrupole Mass Spectrometry And Reflection High-Energy Electron Diffraction¿ 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
12: (2007)
S. Fernández-Garrido, G. Koblmüller, E. Calleja, J. S. Speck: "In-Situ Gan Decomposition Analysis By Quadrupole Mass Spectrometry And Reflection High-Energy Electron Diffraction". 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
13: (2008)
A diagram to grow InAlN layers on (0001)GaN by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008
14: (2008)
Correlating Composition and Luminescence Variations in AlInGaN epilayers 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2008 Toledo (España), 2008
15: (2008)
Correlating Composition and Luminescence Variations in III-Nitride Semiconductor Alloys Microscopy & Microanalysis Meeting Albuquerque, New Mexico (USA), 2008
16: (2008)
Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008. Conferences Proceedings. Montreux, (Suiza), 2008
17: (2008)
Influence of Steering Effects on Ion Channeling Determination of Strain in GaN-based Heterostructures INFN ELOISATRON PROJECT The 51st Workshop, Channeling 2008 Erice (Trapani - Sicilia), Italia, 2008
18: (2008)
In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008
19: (2009)
A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P. J. M. SMULDERS, E. MUÑOZ, E. CALLEJA, I. M. WATSON, E. ALVES "Accurate measurement of strain in semiconductors heterostructures by high-energy ion channelling: the influence of steering effects" 19th International Conference on Ion Beam Analyis Cambridge (UK), 2009
20: (2009)
R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
21: (2009)
S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
22: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
23: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
24: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
25: (2010)
A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 2010
26: (2010)
S. FERNÁNDEZ-GARRIDO, J. GRANDAL, P. LEFEBVRE, M.A. SÁNCHEZ-GARCÍA, E.CALLEJA. "GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters". Int. Symp. on Growth of III Nitrides (ISGN3) Montpellier (France) 2010
27: (2011)
Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy
28: (2011)
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
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S2i 2022 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
