Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Fatima Romero Rojo
Categoría Investigador
MIEMBRO ASOCIADO DE OTRA ENTIDAD
Escuela UPM
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Departamento:
NO ADSCRITOS/AS A DEPARTAMENTO EN EL DIA DE LA FECHA
Area Conocimiento
SIN AREA DE CONOCIMIENTO
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Entidad
UNIVERSIDAD FRANCISCO DE VITORIA
Email (Directorio UPM)
fatima.romero
upm.es
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
10 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
"Fabrication of AlGaN/GaN High Mobility Transistors grown on Si(111) and SiC/Si(111) Substrates" Acuerdo Hispano-Canadiense NRC-SEPOCYT
3: (2007)
"Key Organisation for Research on Integrated Circuits in GaN Technology (KORRIGAN)"Programmes and Activities Memorandum of Understanding (EUROPA MOU); Contract nº 04/102.052/032. CA Nº 2157 V7.(2005-2009).
4: (2008)
Korrigan: Key Organisation for Research on Integrated Circuits in GaN Technology
5: (2013)
Consolider RUE (CSD2009-00046) AEGAN (TEC2009-14307-C02-01) CAVE (TEC2012-38247)
6: (2015)
: Dispositivos avanzados de Gap Ancho para el uso Racional de la Energía (RUE)
7: (2015)
CAVE: Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
8: (2018)
DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
9: (2018)
DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
10: (2018)
DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
Formación de Investigadores y Movilidad
2 Tesis Doctorales
1: (2010)
MARIA FÁTIMA ROMERO ROJO. "Contribución al desarrollo tecnológico de transistores HEMT de AlGaN/GaN".12/07/2010. Director: Elías Muñoz. Sobresaliente cum laude.
2: (2017)
Improvement of performance and reliability of GaN-based high electron mobility transistors (HEMTs) using high-k dielectrics
Difusión de Resultados de Investigación
33 Artículos en revistas
1: (2008)
Effects of N2 plasma pre-treatment on the SiN Passivation of AlGaN/GaN HEMT
2: (2008)
Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
3: (2009)
R. CUERDO, E. SILLERO, M. F. ROMERO, M. J. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "High Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC" IEEE Electron Device Letters, 30, 808-810 (2009)
4: (2010)
M.F. ROMERO, M.M.SANZ, I. TANARRO, A JIMÉNEZ, E. MUÑOZ ''Plasma diagnostic and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma enhanced chemical vapour deposition'' Journal. D: Appl. Phys. 43, 495202 (2010)
5: (2012)
Impact of N-2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
6: (2012)
Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance
7: (2013)
Anisotropic absorption and emission of bulk (1-100) AlN
8: (2013)
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
9: (2013)
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
10: (2013)
Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices
11: (2013)
Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices
12: (2013)
Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
13: (2013)
Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
14: (2013)
Negative spin-exchange splitting in the exciton fine structure of AlN
15: (2013)
Negative spin-exchange splitting in the exciton fine structure of AlN
16: (2013)
Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs
17: (2013)
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
18: (2014)
Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods
19: (2014)
Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
20: (2014)
Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
21: (2014)
Influence of lateral and in- depth metal segregation on the patterning of ohmic contacts for GaN-based devices
22: (2014)
Physical Model for GaN HEMT Design Optimization in High Frequency Switching Applications
23: (2015)
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
24: (2015)
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
25: (2015)
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
26: (2016)
Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs
27: (2016)
Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
28: (2016)
Physics-based Analytical Model for Input, Output and Reverse Capacitance of a GaN HEMT with the Field-plate Structure
29: (2016)
Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
30: (2017)
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
31: (2017)
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
32: (2017)
Physics-based analytical model for input, output and reverse capacitance of a GaN HEMT with the field-plate structure
33: (2018)
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
2 Conferencias invitadas en congresos
1: (2011)
Time-Reversal-Based Multipath Mitigation Technique for Entropy Minimization of SAR Images
2: (2019)
Graphene Devices for Energy Applications
3 Cursos, seminarios y tutoriales
1: (2009)
Dª. Fátima Romero Rojo "Electrical and Microstructural Characteristics of Ohmic Contacts formation on AlGaN/GaN HEMT" April 3rd, 2009
2: (2009)
Dª. Fátima Romero Rojo "Electrical and Microstructural Characteristics of Ohmic Contacts formation on AlGaN/GaN HEMT" April 3rd, 2009
3: (2013)
Thermal assessment of GaN on-Si HEMTs and diodes with different cap layers: GaN, in situ SiN, and in situ SiN/GaN
1 Otras Publicaciones
1: (2016)
Grupo de Dispositivos Semiconductores del ISOM: El GRAFENO
39 Ponencia en Congresos
1: (2007)
A. Redondo-Cubero, M. F. Romero, R. Gago, A. Muñoz-Martín, A.F. Braña, A. Jiménez, E. Muñoz "Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors",European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
2: (2007)
F. González-Posada, A. F. Braña, D. L. Romero, M. F. Romero, E. Muñoz, C. Palacio, A. Jiménez, J. A. Bardwell. "Effects Of Surface Cleaning And Treatments In 2deg Characteristics Of Gan Hemt Structures" 31st Workshop on compound Semiconductor devices and Integrated circuits WOCSDICE-2007Venecia (Italia) 20 al 23 de mayo de 2007
3: (2007)
S. Barbet, R. Aubry, D. Deresmes, M-A. Poisson, T. Mélin, D. Théron, F. Romero, E. Muñoz, A. Jiménez "Kelvin force Microscopy on Gan Material and Devices" 16th European Workshop on Heterostructure Technology "HETECH 2007" Frejus (Francia) 2 al 5 de septiembre de 2007
4: (2008)
DC and RF Performance of AlGaN/GaN HEMTs on SiC at High Temperatures Int. Workshop on Nitrides Montreaux (Suiza), 2008.
5: (2008)
Plasma and surface diagnostics of silicon nitride thin film coatings generated by SiH4+NH3 RF discharges
6: (2009)
I. TANARRO, MM. SANZ, M.F. ROMERO, E. MUÑOZ, A. JIMÉNEZ "Plasma and surface diagnostics of silicon nitride thin film coatings" International Symposium of Plasma Chemistry 19 Bochum (Germany), 2009
7: (2009)
M. F. ROMERO, A. JIMÉNEZ, C. PALACIO, D. DÍAZ, E. MUÑOZ "Electrical and Microstructural Characteristics of Ohmic Contacts formation on AlGaN/GaN HEMT" 7th Spanish Conference on Electronic Devices CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiago de Compostela (Spain), 2009
8: (2009)
M. F. ROMERO, M. J. UREN, A. JIMÉNEZ, R. CUERDO, C. DUA, F. CALLE, E. MUÑOZ "Thermal storage effects in Ni/Au-gate" 7th Spanish Conference on Electronic Devices CDE-09.IEEE Electron Device Letters, 258-261,ISBN: 978-1-4244-2838-0 Santiago de Compostela (Spain), 2009
9: (2010)
S. MARTÍN-HORCAJO, M. J. TADJER, R. CUERDO, M. F. ROMERO, F. CALLE "Evaluation of the thermal stability in D-mode and E-mode HEMTs based on AlGaN/GaN" 19th European Workshop on Hetectostructure HETECH 2010 Creta (Greece), 2010
10: (2011)
Controlled diffusion of Au/Ni/Al/Ti ohmic contacts in AlGaN/GaN HEMTs: limits for the barrier effect of Al
11: (2011)
Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
12: (2011)
Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs
13: (2011)
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
14: (2011)
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
15: (2011)
Method of Channel Temperature and Thermal Resistance Extraction in AlGaN/GaN HEMTs
16: (2011)
Method of channel temperature and thermal resistance extraction in AlGaN/GaN HEMTs
17: (2011)
Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT¿s reliability
18: (2012)
Formation of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN transistors: an ion beam study
19: (2012)
In-depth diffusion and homogeneity of metallic contacts for GaN-based microdevices
20: (2012)
Photocurrent analysis of MSM InAlGaN/GaN heterostructure photodetectors
21: (2012)
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
22: (2012)
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different In content
23: (2013)
Etching of AlGaN/GaN by Cl2-based ICP
24: (2013)
Gd2O3 gate dielectric for AlGaN/GaN HEMTs
25: (2013)
Thermal stability of GaN on-Si HEMTs with different cap layers: GaN, in situ SiN, and in situ SiN/GaN
26: (2013)
Thermal stability of GaN on-Si HEMTs with different in situ cap layers
27: (2013)
Two dimensional electron gas related luminescence in InAl(Ga)N/AlN/GaN-based heterostructures
28: (2014)
Field-dependent photoluminescence of InAlN/GaN based HEMT structures
29: (2014)
Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
30: (2015)
Effects of HfO2 dielectric layer in AlInN/GaN heterostructures
31: (2015)
Reliability assessment of AlGaN/GaN HEMTs with different in situ cap layers under gate and drain bias stress
32: (2015)
Thermal stability study of AlGaN/GaN MOS-HEMTs
33: (2016)
Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs
34: (2016)
Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
35: (2017)
Correlation between photoluminescence and structural properties in InGaN/GaN heterostructures
36: (2017)
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
37: (2017)
Effects of mist exposure on SiN-passivated AlGaN/GaN-based MISHEMTs with and without graphene top layer
38: (2017)
Effects of 2D-Graphene on SiN passivated AlGaN/GaN based-MISHEMTs
39: (2018)
Impermeable Graphene on AlGaN/GaN HEMTs
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S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
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